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Indium arsenide
Results: 139

#	Item
41	Strain-Balanced Quantum Well Solar Cells N.J.Ekins-Daukes,∗ P.Abbott, I.Ballard, K.W.J.Barnham, D.B.Bushnell, J.P.Connolly, J.Nelson, and C.Rohr Experimental Solid State Physics, Blackett Laboratory, Prince Consort Roa Add to Reading List Source URL: www.quantsol.org Language: English - Date: 2009-03-20 11:54:51 Semiconductor devices Indium gallium phosphide Multijunction photovoltaic cell Gallium arsenide Indium gallium arsenide Photovoltaics Quantum dot solar cell Third generation photovoltaic cell Chemistry Solar cells Energy conversion
42	"Reflection difference spectroscopy for the improvement of interfaces of a III-V multijunction solar cell" U. Seidel1, H. Döscher1, N. Szabo1, B.E. Sağol1, B. Kunert2, K. Volz2, W. Stolz2, K. Schwarzburg1, T. Hannappel Add to Reading List Source URL: www.quantsol.org Language: English - Date: 2010-05-11 12:46:20 Energy conversion Semiconductor devices Inorganic compounds Multijunction photovoltaic cell Gallium arsenide Indium gallium arsenide Band gap Epitaxy Gallium nitride Chemistry Thin film deposition Solar cells
43	Investigation on ZnSe for ZnSe/GaAs/Ge High Efficiency Solar Cells Guochang Li Institute of Applied Physics, University of Science and Technology of Hebei, 050018, China Guohua Li Institute of Applied Physics, Shijiazhua Add to Reading List Source URL: www.quantsol.org Language: English - Date: 2009-03-20 11:54:15 Semiconductor devices Compound semiconductors Indium gallium phosphide Phosphides Gallium arsenide Multijunction photovoltaic cell Zinc selenide Quantum efficiency Chemistry Solar cells Energy conversion
44	CS_ad_213x282mm_semiconductor_today_feb14.indd Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2014-03-31 17:35:38 MOSFET Electronic design Field-effect transistor Indium gallium arsenide Multigate device Transistor International Electron Devices Meeting Transconductance Nanowire Chemistry Electronic engineering Electrical engineering
45	NTEGRA Spectra: Solar Cell Diagnostics Solar Cell Diagnostics by Combination of Kelvin Force Microscopy with Local Photoexitation A. V. Ankudinov, Ioffe Physical-Technical Institute of the Russian Academy of Science Add to Reading List Source URL: ntmdt.com Language: English - Date: 2012-07-13 03:01:34 Electromagnetism Solar cells Energy conversion Multijunction photovoltaic cell Gallium arsenide Laser diode Indium gallium arsenide Surface photovoltage Near-field scanning optical microscope Chemistry Technology Semiconductor devices
46	72 Technology focus: Lasers Double metal waveguide yields mid-IR quantum cascade laser with 24.4μm wavelength A double metal waveguide Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-01-23 09:11:28 Semiconductor lasers Quantum cascade laser Indium gallium arsenide Laser diode Laser Indium phosphide Infrared Chemistry Electromagnetic radiation Optics
47	NTEGRA Spectra: Solar Cell Diagnostics Solar Cell Diagnostics by Combination of Kelvin Force Microscopy with Local Photoexitation A. V. Ankudinov, Ioffe Physical-Technical Institute of the Russian Academy of Science Add to Reading List Source URL: www.ntmdt.com Language: English - Date: 2012-07-13 03:01:34 Electromagnetism Solar cells Energy conversion Multijunction photovoltaic cell Gallium arsenide Laser diode Indium gallium arsenide Surface photovoltage Near-field scanning optical microscope Chemistry Technology Semiconductor devices
48	CS_ad_213x282mm_semiconductor_today_feb14.indd Add to Reading List Source URL: www.semiconductor-today.com Language: English - Date: 2015-01-23 09:11:22 Laser diode Laser Gallium antimonide Quantum well Diode Gallium arsenide Gallium Indium gallium arsenide Vertical-cavity surface-emitting laser Chemistry Semiconductor lasers Heat-assisted magnetic recording
49	Name of Accreditation Program Accreditation No. andAdditional Information ASNITE Accreditation Program Add to Reading List Source URL: www.nite.go.jp Language: English - Date: 2015-04-15 04:38:14 Optical devices Lighting Optoelectronics Photodiode Photonics Indium gallium arsenide Photometry Nm Chemistry Optics Electromagnetic radiation
50	3-7 Nano-Gate Transistor — World’s Fastest InP-HEMT — SHINOHARA Keisuke and MATSUI Toshiaki InP-based InGaAs/InAlAs high electron mobility transistors (HEMTs) which can operate in the sub-millimeter-wave frequency Add to Reading List Source URL: www.nict.go.jp Language: English - Date: 2013-11-21 18:46:20 Indium gallium arsenide Indium phosphide Transistor Gallium arsenide Microwave Threshold voltage Transmission electron microscopy Chemistry Optoelectronics High electron mobility transistor